In the half-bridge circuit, the switching action of the active tube will bring some negative effects to the passive tube, such as positive crosstalk induced misdirection, negative crosstalk reverse breakdown device, etc. With the application of wide band gap, the negative effect need to be more attention. In this paper, by designing auxiliary circuit in SiC MOSFET gate, the positive and negative crosstalk effect of bridge arm is effectively suppressed. Then The effectiveness of the proposed method is verified by simulation.